High Frequency (RF) Testing – High Technology Business Development

IEEE Semiconductor Wafer Test Workshop – RF Probing – Session Eight (Wednesday)

Here are the highlights from Session Eight – “RF Probing” of the 21st annual IEEE Semiconductor Wafer Test Workshop (SWTW) from Wednesday June 15, 2011.

Seenew Lai, MPI, “High Bandwidth (>2.5 Gbps) and Fine Pitch (< 30 µm) Cantilever Probe Card“:

The data rate of liquid crystal display (LCD) drivers are increasing to the point that traditional cantilever probe cards cannot support the required bandwidth. Using electromagnetic simulation it was determined Continue reading “IEEE Semiconductor Wafer Test Workshop – RF Probing – Session Eight (Wednesday)”

IEEE Semiconductor Wafer Test Workshop – Challenges of RF Probing – Session Nine (Wednesday)

Here are the highlights from Session Nine – Challenges of RF Probing of the 20th annual IEEE Semiconductor Wafer Test Workshop (SWTW) from Wednesday June 9th.

Ellis Huang, MPI Corporation, “Novel Vertical Probe Card Solution for Multi-DUTs and RF Device on 3 GHz Applications”:

This project was done with UMC using MPI’s VPC vertical probe technology to test Bluetooth modules at 2.45 GHz.

In order to provide a 50 ohm signal as close to the device under test (DUT) as possible, they added dummy ground pins to the probe head around critical signal pins. Even though these signal pins already had adjacent ground pads that were probed on the device, these dummy pins (probes) were positioned closer to the signal pin thereby maintaining the 50 ohm impedance. The dummy pins are connected to other grounds via the copper flex circuit on the space transformer.
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