Here are the highlights from Session Three – “Power Probing” of the 21st annual IEEE Semiconductor Wafer Test Workshop (SWTW) from Monday June 13, 2011.
Michael Huebner, FormFactor, “A Hot Topic: Current Carrying Capacity, Tip Melting and Arcing”:
Power consumption per dynamic random-access memory (DRAM) is increasing to as high as 400 mA or more under normal test conditions. At the same time the number of DRAMs being tested in parallel – and sharing the same power supply – is increasing. Therefore, the risk of current damage to probes is increasing.
Two distinct, but related concerns are Read the rest of this entry »

Posted by Ira Feldman 

